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CA General Purpose High Current NPN Transistor Array. General Purpose High Current NPN Transistor Array. The is a versatile array of five high current. CA from Harris Corporation. Find the PDF Datasheet, Specifications and Distributor Information. CA Renesas / Intersil Bipolar Transistors – BJT datasheet, inventory & pricing.

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Information furnished by Intersil is believed to be accurate and reliable.

For information regarding Intersil Corporation and its products, see www. Information catasheet by Intersil is believed to be accurate and reliable. For information regarding Intersil Corporation and its products, see www.

To avoid undesired coupling between transistors, the substrate Terminal 5 should be maintained at either DC or signal AC ground. To avoid undesired coupling between transistors, the substrate Terminal 5 should be maintained at either DC dattasheet signal AC ground. Actual forcing current is via the emitter for this test.

CA datasheet & applicatoin notes – Datasheet Archive

This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is datasheett implied. They are not intended for use in Reflow solder processing applications.

This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

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All other trademarks mentioned are the property of their respective owners. All Rights Reserved Intersil and design is a trademark owned by Intersil Corporation or one of its subsidiaries.

These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. All Rights Reserved Intersil and design is a trademark owned by Intersil Corporation or one of its subsidiaries.

These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. All other trademarks mentioned are the property of their respective owners. In addition, two of these transistors Q1 and Q2 are matched at low current i.

Independent connections for each transistor plus a separate terminal for the substrate permit maximum flexibility in circuit design. In addition, two of these datsaheet Q1 and Q2 are matched at low current i. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

A suitable bypass capacitor can be used to establish a signal ground. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. The collector of each transistor of the CA is isolated from the substrate by an integral diode.

CA (INTERSIL) PDF技术资料下载 CA 供应信息 IC Datasheet 数据表 (1/4 页)

The substrate must be connected to a voltage which is more negative than any collector voltage in dstasheet to maintain isolation between transistors and provide normal transistor action. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. However, no responsibility is assumed by Intersil dtaasheet its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use.

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Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. A suitable bypass capacitor can be used to establish a signal ground. The collector of each transistor of the CA is isolated from the substrate by an integral diode. Independent connections for each transistor plus a separate terminal for the substrate permit maximum flexibility in circuit design.

CA3083 PDF Datasheet浏览和下载

Actual forcing current is via the emitter for this test. They are not intended for use in Reflow solder processing applications. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. The substrate must be connected to a voltage which is more negative than any collector voltage in datasneet to maintain isolation between transistors and provide normal transistor action.