2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.
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2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
For a pockels driver requiring something in the order of a 3. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer.
TO datasheef aka SOT54; manufacturer known only where stated abbreviations: Transistor selection – best transistor types for avalanche. I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details.
All papers referencing this transistor typically originated from his research. I found paper [A22] only after writing all of this up.
2N Datasheet pdf – GENERAL TRANSISTOR NPN SILICON – Boca Semiconductor Corporation
Vcbo as high as possible fewer devices: I intend to run more tests and measurements based on this paper. Vcbo being close to Vceo’ http: I assume the reason for suggesting older devices are better, into which I read: Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September Also contains many other topics of interest http: Fast and RF transistors tend to work as well.
High current handling 5. A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer. Makers of the Microchip: Stability on all types has been improved by power burn-in. Selection of avalanche transistors for the LHC Project.
Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. Pinout best suited for low C, L Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Of the three transistors selected in paper A7, only the 2N is readily available in Data are collected from each run and stored.
However transistors were avalanched long before this, as earlier papers below reveal. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. 2b3020
2N3020 Datasheet, Equivalent, Cross Reference Search
Kuthi, USA Sept Williams, 9 October Woolston This excellent paper explores multiple Q-switch design topologies. Potential source of low cost ZTX avalanche transistors: The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.
R – T R ansistor selection criteria for avalanche. Larkin, Highland Technology Inc. Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.
Vcbo close to Vceo Older diffused-junction types sometimes do. Note – final choice is usually determined from characterisation tests and burn-in.
Note – I have not bought from this source. A Documentary History of Fairchild Semiconductor. Data runs were typically 3 to 4 months long, with readings taken weekly. Instrum Vol 64, No.
The Zetexes are made in Russia, presumably on an old fab line. Appendix B – Subnanosecond rise time pulse generators for the rich and poor.
Frequency at least MHz 7. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, 2b3020 it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time. Asian sources of cheap Zetex avalanche transistors pedigree unknown.